Data Sheet 0635A

CRYSTAL OSCILLATORS

OC-X87XXXXX-X Series

Rev. L

Micro-miniature OCXO

Features

•

Low Cost DIL 14 package

•

High Vacuum Sealed Crystal

•

Low Power Consumption (500 mW)

•

Fast Warm-up Time (2 minutes)

•

Stratum3 or better Stability

•

Low Aging < 3 ppm over life

•

Very Low Phase Noise (-155dBc/Hz TYP)

•

HCMOS/TTL or Sine-Wave output

•

8 MHz to 160 MHz Frequencies Available

•

Voltage Control Optional

•

Good Performance

•

COTS/Dual use

Applications

•

Telecommunications

•

Data Communications

•

Instrumentation

Vcc

Vc

14

1

OUTPUT

DUT

8

7

357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881

Email: nelsales@nelfc.com www.nelfc.com

Data Sheet 0635A

CRYSTAL OSCILLATORS

OC-X87XXXXX-X Series

Rev. L

Micro-miniature OCXO

Specifications:

Parameter

Symb

Condition

Min

Typ

Max

Unit

Note

Absolute Maximum Ratings

Vcc

-0.5

5.5

V

3.3V or 5V Vcc

Input Break

Down Voltage

Ts

-40

85

Storage temper.

°C

Vc

-1

6

V

Control Voltage

Electrical (3)

F

8

10.000

160

MHz

1*

Frequency

ΔF/F

vs. Temp.

±100

±280

ppb

See chart below

Frequency stability

vs. Supply

10

50

ppb/V

per day

5E-9

after 30 days

Aging

first year

3E-7

15 years

3E-6

.1s to 100s

5E-11

Allan Variance

No voltage control

± 0.5

±2

ppm

Calibration

5E-8/V

Vcc sensitivity

For 10% change

5E-8

Load sensitivity

10 Hz

-100

dBc/Hz

2*

SSB Phase Noise

100 Hz

-130

1 KHz

-140

10 KHz

-150

>100 KHz

-155

After 30 minutes

±100

ppb

Retrace

worst direction

±2.0

ppb/G

G-sensitivity

Vcc

4.75

5.0

5.25

V

See chart below

Input Voltage

3.15

3.3

3.45

P

steady state, 25°C

0.5

0.7

W

Upper operating

Power consumption

steady state, -30°C

1.5

temperature < 70°C, add

start-up

2.5

20% for UOT 85°C

10KOhm//15pF

CMOS Output

Load

Internally AC coupled 50 Ohm

Sine-wave output

τ

to 0.3 ppm accuracy

2

3

min

Warm-up time

-50

-40

dBc

At higher F 1*

Sub-Harmonics

3.3V HCMOS/TTL compatible, 4 ns Tr/Tf, 40/60% duty cyicle

See chart below

Output Waveform

Sine-wave, + 7 dBm ±3 dBm into 50 Ohm, -30 dBc harmonics

Vc

0

4.0

V

Control voltage

from nominal F

±5

±10

ppm

Customer specified

Pull range

Monotonic, posit

5

ppm/V

Customer specified

Deviation slope

Vc0

@25°C, Fnom.

1.0

2.0

3.0

V

5V/3.3 supply

Setability

Environmental and Mechanical

-30°C to 70°C Standard, Other options – see chart below

Operating temp. range

Per MIL-STD-202, 30G, 11ms

Mechanical Shock

Per MIL-STD-202, 5G to 2000 Hz

Vibration

Leads Temperature 260°C, for 10s, Max

Soldering Conditions

Leak rate less than 1x10-8 atm.ccm/s of helium

Hermetic Seal

Electrical Connections

Pin 1- Vc; Pin 7- Case, GND; Pin8 – Output; Pin 14 - Vcc

Pin Out

357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881

Email: nelsales@nelfc.com www.nelfc.com

Data Sheet 0635A

CRYSTAL OSCILLATORS

OC-X87XXXXX-X Series

Rev. L

Micro-miniature OCXO

Creating a Part Number

FREQUENCY, MHz

OC –

X   87  X   X    XX    X  --  X

Temperature Range

Package Code

OC 0.8x0.5" 4pin (14pin)

Code

Specification

A

0°C to 50°C

B

0°C to 70°C

Supply Voltage

C

-20°C to 70°C

D

-40°C to 85°C

Code

Specification

E

-10°C to 60°C

0

5V ± 5%

F

-40°C to 80°C

A

3.3V ± 5%

G

-30°C to 70°C

9

Customer Specific

Voltage Control

Temperature Stability

Code

Specification

V

Voltage

Code

Specification

Output

5x10-8

Control

58

1x10-7

0

No Voltage

17

Code

Specification

2.8x10-7

Control

S3

3x10-7

37

T

TTL/

5x10-7

57

CMOS

Yx10-Z

YZ

S

Sine

Environmental

Not all combinations are available. Consult Factory.

Code

Specification

L

Contains a level of lead

that is in excess of

RoHS directive and is

not designed for reflow

R

RoHS compliant, not

designed for reflow

Notes:

1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic

multiplication. Both methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important –

high frequency crystal will be used. If phase noise close to the carrier and aging are more important – multiplication will be used.

Please consult factory for your specific requirement.

2* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency the

phase noise roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency offset range.

If higher frequency is achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to the lower Q of the

crystal and is usually worse, compared to multiplied solution. On the noise floor, however it remains more or less the same.

3 All parameters, unless otherwise specified, are at nominal conditions, ie: T=25°C, Nominal Vcc & Nominal Load.

357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881

Email: nelsales@nelfc.com www.nelfc.com